Vol. 4, Issue 5 (2016)
Pressure induced metallization in cadmium telluride
Author(s): J Jesse Pius and C Nirmala Louis
Abstract: The metallization of the group II-VI compound Cadmium telluride (CdTe) is investigated through its band structure obtained using the full potential linear muffin-tin orbital (FP-LMTO) method. The ground state properties and band gap values are compared with the experimental results. The values of pressure under reduced volume are calculated using Birch-Murnaghan’s equation of state. The metallization pressure PM is 47.58 GPA. The results of metallization pressure in CdTe is compared with that of Cadmium Selenide (CdSe). Its metallization pressure PM is 66.28 GPA. It is found, that the charge transfer from s and p states to the d state will cause metallization and the metallization pressure increases with a decrease of the lattice constant.
Pages: 88-90 | 1612 Views 125 Downloads
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How to cite this article:
J Jesse Pius, C Nirmala Louis. Pressure induced metallization in cadmium telluride. Int J Chem Stud 2016;4(5):88-90.
